1.3 Highly Resistive Substrate CMOS on SOI for Wireless Front-End Switch Applications
نویسندگان
چکیده
This paper describes 0.18um CMOS silicon-on-insulator (SOI) technology and design techniques for SOI RF switch designs for wireless applications. The measured results of SP4T (single pole four throw) and SP8T (single pole eight throw) switch reference designs are presented. It has been demonstrated that SOI RF switch performance, in terms of power handling, linearity, insertion loss and isolation, is very competitive with those utilizing GaAs pHEMT and silicon-on-sapphire (SOS) technologies, while maintaining a cost and manufacturing advantage.
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